US 11,817,678 B2
Semiconductor laser and laser radar device having the semiconductor laser
Seiichi Takayama, Hong Kong (HK); Kang Gao, Hong Kong (HK); Ryo Hosoi, Hong Kong (HK); and Ryuji Fujii, Hong Kong (HK)
Assigned to SAE Magnetics (H.K.) Ltd., Hong Kong (HK)
Filed by SAE Magnetics (H.K.) Ltd., Hong Kong (HK)
Filed on Mar. 25, 2021, as Appl. No. 17/211,818.
Prior Publication US 2022/0311217 A1, Sep. 29, 2022
Int. Cl. H01S 5/34 (2006.01); G01S 17/931 (2020.01); H01L 33/06 (2010.01); H01S 5/042 (2006.01)
CPC H01S 5/3412 (2013.01) [G01S 17/931 (2020.01); H01L 33/06 (2013.01); H01S 5/04254 (2019.08)] 16 Claims
OG exemplary drawing
 
1. A semiconductor laser comprising:
an active layer which emits laser light; and cladding layers being formed so as to sandwich the active layer,
wherein the active layer comprises a quantum dot layer including a plurality of quantum dots, which respectively confine movements of carriers in the three-dimensional directions;
wherein a stripe electrode being formed in a straight band-like shape, wherein the quantum dot layer comprises a low-density area of which arrangement density of the quantum dots is lower than the other areas, the low-density area is arranged in a stripe-area, corresponding to the stripe electrode.