CPC H01S 5/3412 (2013.01) [G01S 17/931 (2020.01); H01L 33/06 (2013.01); H01S 5/04254 (2019.08)] | 16 Claims |
1. A semiconductor laser comprising:
an active layer which emits laser light; and cladding layers being formed so as to sandwich the active layer,
wherein the active layer comprises a quantum dot layer including a plurality of quantum dots, which respectively confine movements of carriers in the three-dimensional directions;
wherein a stripe electrode being formed in a straight band-like shape, wherein the quantum dot layer comprises a low-density area of which arrangement density of the quantum dots is lower than the other areas, the low-density area is arranged in a stripe-area, corresponding to the stripe electrode.
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