US 11,817,527 B2
Optical device and manufacturing method thereof
Changyoung Park, Yongin-si (KR); and Sanghun Lee, Seoul (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Mar. 30, 2021, as Appl. No. 17/217,552.
Claims priority of application No. 10-2020-0167657 (KR), filed on Dec. 3, 2020.
Prior Publication US 2022/0181519 A1, Jun. 9, 2022
Int. Cl. H01L 33/30 (2010.01); H01L 33/00 (2010.01); H01L 33/58 (2010.01); H01L 33/04 (2010.01)
CPC H01L 33/30 (2013.01) [H01L 33/0066 (2013.01); H01L 33/04 (2013.01); H01L 33/58 (2013.01)] 11 Claims
OG exemplary drawing
 
1. An optical device comprising:
a substrate;
a lattice matching layer directly contacting the substrate;
a multilayered GaAs structure directly contacting the lattice matching layer; and
an optical structure layer on the multilayered GaAs structure, the optical structure layer comprising a Group III-V compound semiconductor material,
wherein the multilayered GaAs structure comprises a first GaAs layer and a second GaAs layer stacked on the first GaAs layer, and
wherein the first GaAs layer has a density higher than a density of the second GaAs layer.