CPC H01L 33/04 (2013.01) [H01L 29/151 (2013.01); H01L 29/2003 (2013.01); H01L 33/32 (2013.01); H01S 5/3013 (2013.01); H01S 5/3206 (2013.01)] | 25 Claims |
1. A semiconductor structure comprising:
a plurality of first semiconductor layers comprising wide bandgap semiconductor layers;
a narrow bandgap semiconductor layer; and
a chirp layer between the plurality of first semiconductor layers and the narrow bandgap semiconductor layer;
wherein:
the plurality of first semiconductor layers comprise an unintentionally doped short-period superlattice (SPSL); and
values of overlap integrals between different electron wavefunctions in a conduction band of the chirp layer are less than 0.05 for intersubband transition energies greater than 1.0 eV, when the semiconductor structure is biased at an operating potential.
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