US 11,817,525 B2
Semiconductor structure with chirp layer
Norbert Krause, Hawthorne (AU); and Guilherme Tosi, Yeerongpilly (AU)
Assigned to Silanna UV Technologies Pte Ltd, Singapore (SG)
Filed by Silanna UV Technologies Pte Ltd, Singapore (SG)
Filed on Apr. 8, 2021, as Appl. No. 17/301,598.
Application 17/301,598 is a continuation of application No. 17/062,369, filed on Oct. 2, 2020, granted, now 10,978,611.
Application 17/062,369 is a continuation of application No. PCT/IB2019/052675, filed on Apr. 1, 2019.
Claims priority of provisional application 62/653,750, filed on Apr. 6, 2018.
Prior Publication US 2021/0226082 A1, Jul. 22, 2021
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 33/04 (2010.01); H01L 29/15 (2006.01); H01L 29/20 (2006.01); H01L 33/32 (2010.01); H01S 5/30 (2006.01); H01S 5/32 (2006.01)
CPC H01L 33/04 (2013.01) [H01L 29/151 (2013.01); H01L 29/2003 (2013.01); H01L 33/32 (2013.01); H01S 5/3013 (2013.01); H01S 5/3206 (2013.01)] 25 Claims
OG exemplary drawing
 
1. A semiconductor structure comprising:
a plurality of first semiconductor layers comprising wide bandgap semiconductor layers;
a narrow bandgap semiconductor layer; and
a chirp layer between the plurality of first semiconductor layers and the narrow bandgap semiconductor layer;
wherein:
the plurality of first semiconductor layers comprise an unintentionally doped short-period superlattice (SPSL); and
values of overlap integrals between different electron wavefunctions in a conduction band of the chirp layer are less than 0.05 for intersubband transition energies greater than 1.0 eV, when the semiconductor structure is biased at an operating potential.