	US 11,817,505 B2
	Semiconductor device
Shunpei Yamazaki, Setagaya (JP); Masahiko Hayakawa, Atsugi (JP); and Tatsuya Honda, Isehara (JP)
Assigned to Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken (JP)
Filed by Semiconductor Energy Laboratory Co., Ltd., Atsugi (JP)
Filed on Mar. 4, 2022, as Appl. No. 17/686,736.
Application 17/686,736 is a continuation of application No. 16/731,582, filed on Dec. 31, 2019, granted, now 11,271,115.
Application 16/731,582 is a continuation of application No. 15/480,746, filed on Apr. 6, 2017, granted, now 10,535,776, issued on Jan. 14, 2020.
Application 15/480,746 is a continuation of application No. 14/445,462, filed on Jul. 29, 2014, granted, now 9,620,623, issued on Apr. 11, 2017.
Application 14/445,462 is a continuation of application No. 13/651,911, filed on Oct. 15, 2012, granted, now 8,809,855, issued on Aug. 19, 2014.
Claims priority of application No. 2011-230126 (JP), filed on Oct. 19, 2011.
Prior Publication US 2022/0293794 A1, Sep. 15, 2022
Int. Cl. H01L 27/00 (2006.01); H01L 29/00 (2006.01); H01L 29/786 (2006.01); H01L 29/49 (2006.01); H01L 29/66 (2006.01); H01L 27/12 (2006.01); H01L 27/146 (2006.01); H01L 29/24 (2006.01); H01L 29/45 (2006.01); H10K 59/121 (2023.01); G02F 1/1368 (2006.01)

CPC H01L 29/78606 (2013.01) [H01L 27/1225 (2013.01); H01L 27/14616 (2013.01); H01L 29/24 (2013.01); H01L 29/45 (2013.01); H01L 29/49 (2013.01); H01L 29/66742 (2013.01); H01L 29/66969 (2013.01); H01L 29/7869 (2013.01); H01L 29/78618 (2013.01); H01L 29/78696 (2013.01); G02F 1/1368 (2013.01); G02F 2203/01 (2013.01); G02F 2203/64 (2013.01); H10K 59/1213 (2023.02)]

9 Claims

1. A semiconductor device comprising:

a transistor;

a capacitor electrically connected to the transistor; and

a light-emitting element electrically connected to the transistor,

wherein the transistor comprises:

a first conductive layer functioning as a gate electrode layer over a substrate;

a first insulating film over the first conductive layer;

a first oxide semiconductor film comprising a channel formation region;

a second conductive layer functioning as one of a source electrode and a drain electrode; and

a third conductive layer functioning as the other of the source electrode and the drain electrode,

wherein the capacitor comprises a second oxide semiconductor film,

wherein the semiconductor device further comprises:

a fourth conductive layer comprising a region in contact with a top surface of the second oxide semiconductor film;

a fifth conductive layer comprising a region intersecting with the first conductive layer when seen from above;

a second insulating film over the second conductive layer, the third conductive layer, and the fourth conductive layer; and

an electrode over and in contact with the second conductive layer through an opening of the second insulating film, the electrode functioning as a pixel electrode of the light-emitting element, and

wherein the second conductive layer, the third conductive layer, the fourth conductive layer, and the fifth conductive layer comprises the same material, and

wherein a concentration of one of chlorine and fluorine on a top surface of the gate electrode layer is 5×10¹⁸atoms/cm³or lower.