US 11,817,500 B2
Method of manufacturing a semiconductor device and a semiconductor device
Shahaji B. More, Hsinchu (TW); and Chandrashekhar Prakash Savant, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on Aug. 10, 2022, as Appl. No. 17/885,435.
Application 17/885,435 is a continuation of application No. 17/033,479, filed on Sep. 25, 2020, granted, now 11,489,075.
Claims priority of provisional application 63/045,421, filed on Jun. 29, 2020.
Prior Publication US 2022/0384653 A1, Dec. 1, 2022
Int. Cl. H01L 29/78 (2006.01); H01L 21/8238 (2006.01); H01L 29/08 (2006.01); H01L 29/06 (2006.01); H01L 29/24 (2006.01); H01L 29/267 (2006.01); H01L 21/02 (2006.01); H01L 21/285 (2006.01); H01L 29/66 (2006.01); H01L 27/092 (2006.01)
CPC H01L 29/7848 (2013.01) [H01L 21/02521 (2013.01); H01L 21/28518 (2013.01); H01L 21/823814 (2013.01); H01L 21/823821 (2013.01); H01L 21/823871 (2013.01); H01L 21/823878 (2013.01); H01L 27/0924 (2013.01); H01L 29/0653 (2013.01); H01L 29/0847 (2013.01); H01L 29/24 (2013.01); H01L 29/267 (2013.01); H01L 29/66492 (2013.01); H01L 29/66545 (2013.01); H01L 29/66636 (2013.01); H01L 29/66795 (2013.01); H01L 29/7833 (2013.01); H01L 29/7851 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
an isolation insulating layer disposed over a substrate;
a first fin structure disposed over the substrate;
a gate structure disposed over a channel region of the first fin structure;
a first source/drain epitaxial layer disposed over the first fin structure; and
a first fin liner layer disposed on side faces of a part of the first in structure and a part of the first epitaxial layer, wherein:
the first fin liner layer includes a lower portion disposed on one of the side faces and a higher portion disposed on another of the side faces,
a height of the lower portion is smaller than a height of the higher portion, and
the first fin liner layer includes a vertical portion having a first dielectric layer and a second dielectric layer and a horizontal portion having the second dielectric layer and not having the first dielectric layer.