US 11,817,478 B2
Termination structures with reduced dynamic output capacitance loss
Jaume Roig-Guitart, Oudenaarde (BE); Fredrik Allerstam, Solna (SE); Thomas Neyer, Munich (DE); Andrei Konstantinov, Sollentuna (SE); Martin Domeij, Sollentuna (SE); and Jangkwon Lim, Nacka (SE)
Assigned to SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Phoenix, AZ (US)
Filed by SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Phoenix, AZ (US)
Filed on Dec. 23, 2020, as Appl. No. 17/247,796.
Prior Publication US 2022/0199764 A1, Jun. 23, 2022
Int. Cl. H01L 29/06 (2006.01); H01L 29/16 (2006.01)
CPC H01L 29/0623 (2013.01) [H01L 29/1608 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device:
a substrate of a first conductivity type;
an active region disposed in the substrate, the active region including at least one active device; and
a termination region disposed in the substrate adjacent to the active region, the termination region excluding an active device, the termination region including a junction termination extension (JTE) of a second conductivity type, the second conductivity type being opposite the first conductivity type, the JTE having:
a first depletion stopper region disposed in an upper portion of the JTE;
a second depletion stopper region disposed in a lower portion of the JTE; and
a high carrier mobility region disposed between the first depletion stopper region and the second depletion stopper region, the high carrier mobility region having a constant doping region extending over a range of depths of the high carrier mobility region in the substrate, the high carrier mobility region having a carrier mobility that is greater than respective carrier mobilities of the first depletion stopper region and the second depletion stopper region.
 
15. A semiconductor device:
a substrate of a first conductivity type;
an active region disposed in the substrate, the active region including at least one active device; and
a termination region disposed in the substrate adjacent to the active region, the termination region excluding an active device, the termination region including a junction termination extension (JTE) of a second conductivity type, the second conductivity type being opposite the first conductivity type, the JTE having:
a first depletion stopper region extending from a surface of the substrate to a first depth in the substrate;
a high carrier mobility region extending from the first depth in the substrate to a second depth in the substrate, the second depth being greater than the first depth, the high carrier mobility region having a constant doping region extending over a range of depths between the first depth and the second depth; and
a second depletion stopper region extending from the second depth in the substrate to a third depth in the substrate, the third depth being greater than the second depth,
the high carrier mobility region having a carrier mobility that is greater than respective carrier mobilities of the first depletion stopper region and the second depletion stopper region.
 
18. A semiconductor device:
a substrate including:
a heavily-doped n-type silicon carbide substrate; and
a lightly-doped n-type silicon carbide epitaxial layer disposed on the heavily-doped n-type silicon carbide substrate;
an active region disposed in the lightly-doped n-type silicon carbide epitaxial layer, the active region including at least one of:
a power diode; or
a power n-channel metal-oxide semiconductor field-effect transistor (MOSFET); and
a termination region disposed in the lightly-doped n-type silicon carbide epitaxial layer adjacent to the active region, the termination region excluding an active device, the termination region including a p-type junction termination extension (JTE), the p-type JTE having:
a first depletion stopper region extending from a surface of the substrate to a first depth in the substrate;
a high carrier mobility region extending from the first depth in the substrate to a second depth in the substrate, the second depth being greater than the first depth, the high carrier mobility region having a constant doping region extending over a range of depths between the first depth and the second depth; and
a second depletion stopper region extending from the second depth in the substrate to a third depth in the substrate, the third depth being greater than the second depth,
the high carrier mobility region having a carrier mobility that is greater than respective carrier mobilities of the first depletion stopper region and the second depletion stopper region.