US 11,817,475 B2
Semiconductor device and semiconductor apparatus including the same
Jaeho Lee, Seoul (KR); Yong-Hee Cho, Suwon-si (KR); Seungwoo Jang, Suwon-si (KR); Younggeun Park, Suwon-si (KR); and Jooho Lee, Hwaseong-si (KR)
Assigned to Samsung Electronics Co., Ltd., Gyeonggi-do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Sep. 2, 2021, as Appl. No. 17/465,223.
Claims priority of application No. 10-2020-0163330 (KR), filed on Nov. 27, 2020; and application No. 10-2021-0034245 (KR), filed on Mar. 16, 2021.
Prior Publication US 2022/0173209 A1, Jun. 2, 2022
Int. Cl. H01L 29/792 (2006.01); H01L 49/02 (2006.01)
CPC H01L 28/55 (2013.01) [H01L 28/65 (2013.01); H01L 29/792 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A capacitor comprising:
a first electrode;
a second electrode which is apart from the first electrode; and
a dielectric layer between the first electrode and the second electrode, the dielectric layer comprising
a base material including an oxide of a base metal, the base material having a dielectric constant of about 20 to about 70, and
co-dopants including a Group 3 element and a Group 5 element.