CPC H01L 27/0802 (2013.01) [H01L 21/02595 (2013.01); H01L 28/20 (2013.01)] | 20 Claims |
1. A resistor comprising:
a non-conductive surface over a semiconductor substrate;
a patterned polysilicon layer on the non-conductive surface, the patterned polysilicon layer including polycrystalline silicon wherein 50% of grains in the polycrystalline silicon have a diameter smaller than 20 nm;
a first terminal connected to the patterned polysilicon layer; and
a second terminal connected to the patterned polysilicon layer and spaced apart from the first terminal.
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