US 11,817,453 B2
Semiconductor device and electronic device
Junpei Momo, Kanagawa (JP); Kazutaka Kuriki, Kanagawa (JP); and Hiromichi Godo, Kanagawa (JP)
Assigned to Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken (JP)
Filed by SEMICONDUCTOR ENERGY LABORATORY CO., LTD., Atsugi (JP)
Filed on Mar. 4, 2022, as Appl. No. 17/686,460.
Application 16/238,590 is a division of application No. 14/817,242, filed on Aug. 4, 2015, granted, now 10,204,898, issued on Feb. 12, 2019.
Application 17/686,460 is a continuation of application No. 17/009,823, filed on Sep. 2, 2020, granted, now 11,276,685, issued on Mar. 15, 2022.
Application 17/009,823 is a continuation of application No. 16/238,590, filed on Jan. 3, 2019, granted, now 10,903,206, issued on Jan. 26, 2021.
Claims priority of application No. 2014-162455 (JP), filed on Aug. 8, 2014.
Prior Publication US 2022/0189950 A1, Jun. 16, 2022
Int. Cl. H01L 27/06 (2006.01); H01L 29/66 (2006.01); H01G 11/14 (2013.01); H01L 29/786 (2006.01); H01L 27/12 (2006.01); H01L 21/00 (2006.01); H01G 11/08 (2013.01); H01L 21/8258 (2006.01)
CPC H01L 27/0629 (2013.01) [H01G 11/14 (2013.01); H01L 27/1207 (2013.01); H01L 27/1211 (2013.01); H01L 27/1225 (2013.01); H01L 29/66742 (2013.01); H01L 29/786 (2013.01); H01L 29/7869 (2013.01); H01L 29/78696 (2013.01); H01G 11/08 (2013.01); H01L 21/8258 (2013.01); H01L 27/0688 (2013.01); Y02E 60/13 (2013.01)] 3 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a first circuit comprising a first transistor;
a first insulating film over the first transistor;
a capacitor over the first insulating film;
a second insulating film over the capacitor; and
a second circuit comprising a second transistor over the second insulating film,
wherein the second transistor comprises a semiconductor comprising a channel formation region,
wherein the semiconductor comprises a first opening and a second opening,
wherein a first connection electrode penetrates the semiconductor through the first opening,
wherein a second connection electrode penetrates the semiconductor through the second opening, and
wherein the first circuit and the second circuit are electrically connected by the first connection electrode.