CPC H01L 27/0605 (2013.01) [H01L 21/02389 (2013.01); H01L 21/76264 (2013.01); H01L 21/8258 (2013.01); H01L 27/0629 (2013.01); H01L 27/1207 (2013.01)] | 20 Claims |
1. An integrated circuit comprising:
a first region of a substrate containing a first integrated device formed from a first semiconductor material;
a second region of the substrate containing a second integrated device formed from a second semiconductor material of a different base elemental composition than the first semiconductor material; and
a third region of the substrate containing an electrically-insulating dielectric material that extends through the substrate to contact a conductive film formed on a backside of the substrate, wherein the third region of the substrate is located between the first region and the second region.
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