US 11,817,450 B2
Heterolithic integrated circuits including integrated devices formed on semiconductor materials of different elemental composition
Timothy E. Boles, Tyngsboro, MA (US); and Wayne Mack Struble, Franklin, MA (US)
Assigned to MACOM TECHNOLOGY SOLUTIONS HOLDINGS, INC., Lowell, MA (US)
Filed by MACOM Technology Solutions Holdings, Inc., Lowell, MA (US)
Filed on Feb. 22, 2021, as Appl. No. 17/181,613.
Application 17/181,613 is a continuation of application No. 15/875,441, filed on Jan. 19, 2018, granted, now 10,950,598.
Prior Publication US 2021/0202474 A1, Jul. 1, 2021
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 27/06 (2006.01); H01L 21/762 (2006.01); H01L 27/12 (2006.01); H01L 21/02 (2006.01); H01L 21/8258 (2006.01)
CPC H01L 27/0605 (2013.01) [H01L 21/02389 (2013.01); H01L 21/76264 (2013.01); H01L 21/8258 (2013.01); H01L 27/0629 (2013.01); H01L 27/1207 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An integrated circuit comprising:
a first region of a substrate containing a first integrated device formed from a first semiconductor material;
a second region of the substrate containing a second integrated device formed from a second semiconductor material of a different base elemental composition than the first semiconductor material; and
a third region of the substrate containing an electrically-insulating dielectric material that extends through the substrate to contact a conductive film formed on a backside of the substrate, wherein the third region of the substrate is located between the first region and the second region.