US 11,817,321 B2
Plasma processing apparatus and plasma processing method
Yuzuru Sakai, Miyagi (JP); and Ryo Terashima, Miyagi (JP)
Assigned to Tokyo Electron Limited, Tokyo (JP)
Filed by Tokyo Electron Limited, Tokyo (JP)
Filed on Oct. 14, 2021, as Appl. No. 17/450,886.
Claims priority of application No. 2020-176954 (JP), filed on Oct. 21, 2020.
Prior Publication US 2022/0122847 A1, Apr. 21, 2022
Int. Cl. H01L 21/311 (2006.01); H01J 37/32 (2006.01); H01L 21/67 (2006.01); H01L 21/687 (2006.01)
CPC H01L 21/31116 (2013.01) [H01J 37/32449 (2013.01); H01J 37/32834 (2013.01); H01J 37/32899 (2013.01); H01L 21/6719 (2013.01); H01L 21/68771 (2013.01); H01J 2237/3341 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A plasma processing apparatus comprising:
a plurality of plasma processing chambers;
a process gas supply line configured to supply a plasma processing gas to each of the plurality of plasma processing chambers;
a first additive gas supply line configured to supply an additive gas to each of the plurality of plasma processing chambers;
an exhaust space shared by the plurality of plasma processing chambers; and
a controller,
wherein the controller determines a first plasma processing chamber group and a second plasma processing chamber group, the first plasma processing chamber group including one or more plasma processing chambers, each of which performs the plasma processing on a substrate, among the plurality of plasma processing chambers, and the second plasma processing chamber group including one or more plasma processing chambers, each of which does not perform the plasma processing on a substrate, among the plurality of plasma processing chambers, and
wherein the controller causes the additive gas to be supplied to the one or more plasma processing chambers of the second plasma processing chamber group from the first additive gas supply line.
 
13. A plasma processing method performed by a plasma processing apparatus including a plurality of plasma processing chambers, a process gas supply line configured to supply a plasma processing gas to each of the plurality of plasma processing chambers, a first additive gas supply line configured to supply an additive gas to each of the plurality of plasma processing chambers, and an exhaust space shared by the plurality of plasma processing chambers, the plasma processing method comprising:
determining a first plasma processing chamber group and a second plasma processing chamber group, the first plasma processing chamber group including one or more plasma processing chambers, each of which performs the plasma processing on a substrate, among the plurality of plasma processing chambers, and the second plasma processing chamber group including one or more plasma processing chambers, each of which does not perform the plasma processing on a substrate, among the plurality of plasma processing chambers, and
causing the additive gas to be supplied to the one or more plasma processing chambers of the second plasma processing chamber group from the first additive gas supply line.