US 11,817,320 B2
CVD based oxide-metal multi structure for 3D NAND memory devices
Susmit Singha Roy, Mountain View, CA (US); Kelvin Chan, San Ramon, CA (US); Hien Minh Le, San Jose, CA (US); Sanjay Kamath, Fremont, CA (US); Abhijit Basu Mallick, Fremont, CA (US); Srinivas Gandikota, Santa Clara, CA (US); and Karthik Janakiraman, San Jose, CA (US)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Aug. 29, 2019, as Appl. No. 16/554,834.
Application 16/554,834 is a division of application No. 15/633,366, filed on Jun. 26, 2017, granted, now 10,410,869.
Claims priority of provisional application 62/355,611, filed on Jun. 28, 2016.
Prior Publication US 2019/0393042 A1, Dec. 26, 2019
Int. Cl. C23C 16/50 (2006.01); H01L 21/285 (2006.01); H01L 21/02 (2006.01); C23C 16/06 (2006.01); C23C 16/02 (2006.01); C23C 16/40 (2006.01); C23C 16/505 (2006.01); C23C 28/00 (2006.01); H01L 21/3205 (2006.01); H01L 21/768 (2006.01); H10B 43/27 (2023.01)
CPC H01L 21/28506 (2013.01) [C23C 16/0272 (2013.01); C23C 16/06 (2013.01); C23C 16/402 (2013.01); C23C 16/505 (2013.01); C23C 28/322 (2013.01); C23C 28/34 (2013.01); C23C 28/345 (2013.01); C23C 28/42 (2013.01); H01L 21/0245 (2013.01); H01L 21/02164 (2013.01); H01L 21/02274 (2013.01); H01L 21/02304 (2013.01); H01L 21/02315 (2013.01); H01L 21/02458 (2013.01); H01L 21/02491 (2013.01); H01L 21/02697 (2013.01); H01L 21/28556 (2013.01); H01L 21/28568 (2013.01); H01L 21/32051 (2013.01); H01L 21/76876 (2013.01); H10B 43/27 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A method, comprising:
placing a substrate into a processing chamber;
forming a metal layer on a seed layer formed on the substrate, comprising:
increasing a temperature of the substrate to a processing temperature;
flowing a metal-containing precursor and nitrogen gas into the processing chamber, wherein a ratio of a flow rate of the metal-containing precursor to a flow rate of the nitrogen gas ranges from 10:1 to 1:2; and
forming a plasma inside of the processing chamber by igniting the metal-containing precursor and the nitrogen gas with a high frequency radio frequency power and a low frequency radio frequency power; and
forming an oxide layer on a surface of the metal layer disposed on the substrate, forming the oxide layer comprising:
flowing an oxygen-free precursor into the processing chamber, the oxygen-free precursor being excited by a plasma to form an oxygen-free species;
flowing an oxygen-containing gas into the processing chamber subsequent to forming the oxygen-free species while continuing to flow the oxygen-free precursor into the processing chamber, the oxygen-containing gas being excited by the plasma to form an oxygen species; and
bonding the oxygen-free species to the oxygen species during forming of the oxygen species.