US 11,817,317 B2
High-silicon-content wet-removable planarizing layer
Ming Luo, Creve Coeur, MO (US); Yubao Wang, Rolla, MO (US); Kaumba Sakavuyi, Rolla, MO (US); and Vandana Krishnamurthy, Rolla, MO (US)
Assigned to Brewer Science, Inc., Rolla, MO (US)
Filed by Brewer Science, Inc., Rolla, MO (US)
Filed on Oct. 26, 2020, as Appl. No. 17/079,916.
Claims priority of provisional application 62/925,259, filed on Oct. 24, 2019.
Prior Publication US 2021/0125829 A1, Apr. 29, 2021
Int. Cl. H01L 21/033 (2006.01); G03F 1/46 (2012.01); H01L 21/027 (2006.01)
CPC H01L 21/0332 (2013.01) [G03F 1/46 (2013.01); H01L 21/0271 (2013.01)] 37 Claims
OG exemplary drawing
 
1. A method of forming a structure, said method comprising:
providing a substrate comprising a surface comprising topographic features, said substrate optionally including one or more intermediate layers on said substrate surface;
applying a composition to said substrate surface, or on said one or more intermediate layers, if present, so as to form a planarizing layer, said composition comprising a polymer comprising [3-(triethoxysilyl)propyl]succinic anhydride monomers; and
performing (I), (II), (III), (IV), or (V):
(I) forming a silicon hardmask layer on said planarizing layer;
optionally forming an antireflective layer on said silicon hardmask layer; and
forming a photoresist layer on said silicon hardmask layer, or on said antireflective layer, if present;
(II) forming a silicon hardmask layer on said planarizing layer;
forming a carbon-rich layer on said silicon hardmask layer;
optionally forming an antireflective layer on said carbon-rich layer; and
forming a photoresist layer on said carbon-rich layer, or on said antireflective layer, if present;
(III) forming a carbon-rich layer on said planarizing layer;
optionally forming an antireflective layer on said carbon-rich layer; and
forming a photoresist layer on said carbon-rich layer, or on said antireflective layer, if present;
(IV) forming a carbon-rich layer on said planarizing layer;
forming a silicon hardmask layer on said carbon-rich layer;
optionally forming an antireflective layer on said silicon hardmask layer; and
forming a photoresist layer on said silicon hardmask layer, or on said antireflective layer, if present; or
(V) forming an antireflective layer on said planarizing layer; and
forming a photoresist layer on said antireflective layer.
 
15. A structure comprising:
a substrate comprising a surface comprising topographic features, said substrate optionally including one or more intermediate layers on said substrate surface;
a planarizing layer on said substrate surface or on said one or more intermediate layers, if present, said planarizing layer comprising a polymer comprising [3-(triethoxysilyl)propyl]succinic anhydride monomers; and
one of (I), (II), (III), (IV), or (V):
(I) a silicon hardmask layer on said planarizing layer;
optionally an antireflective layer on said silicon hardmask layer; and
a photoresist layer on said silicon hardmask layer, or on said antireflective layer, if present;
(II) a silicon hardmask layer on said planarizing layer;
a carbon-rich layer on said silicon hardmask layer;
optionally an antireflective layer on said carbon-rich layer; and
a photoresist layer on said carbon-rich layer, or on said antireflective layer, if present;
(III) a carbon-rich layer on said planarizing layer;
optionally an antireflective layer on said carbon-rich layer; and
a photoresist layer on said carbon-rich layer, or on said antireflective layer, if present;
(IV) a carbon-rich layer on said planarizing layer;
a silicon hardmask layer on said carbon-rich layer;
optionally an antireflective layer on said silicon hardmask layer; and
a photoresist layer on said silicon hardmask layer, or on said antireflective layer, if present; or
(V) an antireflective layer on said planarizing layer; and
a photoresist layer on said antireflective layer.