CPC H01J 37/32449 (2013.01) [C23C 16/45557 (2013.01); C23C 16/466 (2013.01); H01L 21/67248 (2013.01); H01L 21/67253 (2013.01); H01L 22/12 (2013.01)] | 20 Claims |
1. A substrate processing apparatus, comprising:
a thermal processing chamber defining a processing volume;
a gas line coupled to the thermal processing chamber;
an exhaust pump coupled to the thermal processing chamber by an exhaust conduit;
an exhaust flow controller coupled to the exhaust conduit; and
a sampling line coupled to the exhaust conduit, the sampling line comprising an organic compound sensor and a sampling flow control valve, the organic compound sensor being communicatively coupled to the exhaust flow controller.
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10. A method of processing a substrate comprising,
processing a substrate in a thermal processing chamber using one or more operating parameters;
generating sensor data from a sensor reading of an effluent of the thermal processing chamber using an organic compound sensor;
determining at least one property of the effluent based on the sensor data; and
adjusting the one or more operating parameters for processing the substrate based on the at least one property.
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15. A system programmed to perform a method, comprising:
an algorithm stored in a memory of the system, wherein the algorithm comprises a number of instructions which, when executed by a processor, causes a method to be performed, comprising:
processing a substrate in a thermal processing chamber using one or more operating parameters;
generating sensor data from a sensor reading of an effluent of the thermal processing chamber using an organic compound sensor;
determining at least one property of the effluent based on the sensor data; and
adjusting the one or more operating parameters for processing the substrate based on the at least one property.
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