US 11,817,170 B2
Storage controller determining error count, method of operating the same, and method of operating storage device including the same
Woohyun Kang, Hwaseong-si (KR); Youngdeok Seo, Seoul (KR); Hyuna Kim, Suwon-si (KR); Hyunkyo Oh, Yongin-si (KR); Heewon Lee, Seoul (KR); and Donghoo Lim, Hwaseong-si (KR)
Assigned to Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Apr. 19, 2022, as Appl. No. 17/723,959.
Claims priority of application No. 10-2021-0131025 (KR), filed on Oct. 1, 2021.
Prior Publication US 2023/0103694 A1, Apr. 6, 2023
Int. Cl. G11C 29/00 (2006.01); G11C 29/50 (2006.01)
CPC G11C 29/50004 (2013.01) [G11C 2029/5004 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of operating a storage controller which communicates with a non-volatile memory device, the method comprising:
outputting a first command including a request for on-chip valley search (OVS) count data of a memory region of the non-volatile memory device to the non-volatile memory device, wherein the OVS count data include a first count value of a first read voltage and a second count value of a second read voltage;
receiving the OVS count data from the non-volatile memory device;
determining a first error count value for the first read voltage and a second error count value for the second read voltage, based on the OVS count data; and
determining a subsequent operation, based on the first and second error count values.