CPC G06V 40/1318 (2022.01) [G01D 5/24 (2013.01)] | 20 Claims |
1. A silicon sensor device, comprising:
a plurality of metal layers; and
a plurality of dielectric layers, wherein each of the plurality of metal layers is disposed on a respective dielectric layer, and wherein each of the plurality of metal layers is separated from an adjacent metal layer by a respective dielectric layer;
wherein the plurality of metal layers include:
a first metal layer comprising a plurality of transmitter electrodes and a plurality of receiver electrodes;
a second metal layer disposed beneath the first metal layer, wherein the second metal layer comprises a plurality of routing traces for the plurality of transmitter electrodes and a plurality of shielding blocks; and
one or more circuit layers disposed beneath the second metal layer;
wherein a respective shielding block of the plurality of shielding blocks is configured to shield a respective portion of a respective receiver electrode of the plurality of receiver electrodes from energy and/or noise originating from the one or more circuit layers; and
wherein the plurality of metal layers and the plurality of dielectric layers are disposed on a same die.
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