US 11,816,919 B2
Sensor device for transcapacitive sensing with shielding
Lorenzo Crespi, Costa Mesa, CA (US); Ketankumar Balubhai Patel, Lake Forest, CA (US); Balakishan Challa, Irvine, CA (US); Claudio DeBerti, Irvine, CA (US); and Guozhong Shen, Fremont, CA (US)
Assigned to Synaptics Incorporated, San Jose, CA (US)
Filed by Synaptics Incorporated, San Jose, CA (US)
Filed on Nov. 7, 2022, as Appl. No. 18/053,205.
Application 18/053,205 is a continuation in part of application No. 17/338,831, filed on Jun. 4, 2021, granted, now 11,519,801.
Prior Publication US 2023/0110873 A1, Apr. 13, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. G06V 40/13 (2022.01); G01D 5/24 (2006.01)
CPC G06V 40/1318 (2022.01) [G01D 5/24 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A silicon sensor device, comprising:
a plurality of metal layers; and
a plurality of dielectric layers, wherein each of the plurality of metal layers is disposed on a respective dielectric layer, and wherein each of the plurality of metal layers is separated from an adjacent metal layer by a respective dielectric layer;
wherein the plurality of metal layers include:
a first metal layer comprising a plurality of transmitter electrodes and a plurality of receiver electrodes;
a second metal layer disposed beneath the first metal layer, wherein the second metal layer comprises a plurality of routing traces for the plurality of transmitter electrodes and a plurality of shielding blocks; and
one or more circuit layers disposed beneath the second metal layer;
wherein a respective shielding block of the plurality of shielding blocks is configured to shield a respective portion of a respective receiver electrode of the plurality of receiver electrodes from energy and/or noise originating from the one or more circuit layers; and
wherein the plurality of metal layers and the plurality of dielectric layers are disposed on a same die.