US 11,815,982 B2
Operating method of a nonvolatile memory device for programming multipage data
Wandong Kim, Siheung-si (KR); Jinyoung Kim, Seoul (KR); Sehwan Park, Yongin-si (KR); Hyun Seo, Goyang-si (KR); and Sangwan Nam, Hwaseong-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Oct. 19, 2022, as Appl. No. 17/968,912.
Application 17/968,912 is a continuation of application No. 17/233,816, filed on Apr. 19, 2021, granted, now 11,500,706.
Claims priority of application No. 10-2020-0103435 (KR), filed on Aug. 18, 2020.
Prior Publication US 2023/0044730 A1, Feb. 9, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. G11C 7/00 (2006.01); G06F 11/07 (2006.01); G11C 16/04 (2006.01); G11C 16/10 (2006.01); G11C 16/26 (2006.01); G11C 11/56 (2006.01); G11C 16/34 (2006.01)
CPC G06F 11/0727 (2013.01) [G06F 11/076 (2013.01); G06F 11/0757 (2013.01); G11C 16/0483 (2013.01); G11C 16/10 (2013.01); G11C 16/26 (2013.01); G11C 11/56 (2013.01); G11C 16/34 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An operating method of a nonvolatile memory device for programming multi-page data, the operating method comprising:
receiving the multi-page data from a memory controller;
programming first page data among the multi-page data to first memory cells connected to a word line adjacent to a selected word line;
reading previous page data previously stored in second memory cells connected to the selected word line based on a first sensing value and a second sensing value after programming the first page data; and
programming the previous page data read from the second memory cells and second page data among the multi-page data to the second memory cells.