	US 11,815,801 B2
	Reflective type blankmask and photomask for EUV
Cheol Shin, Daegu-si (KR); Jong-Hwa Lee, Daegu-si (KR); Chul-Kyu Yang, Daegu-si (KR); and Gil-Woo Kong, Daegu-si (KR)
Assigned to S & S TECH CO., LTD., Daegu-si (KR)
Filed by S&S TECH Co., Ltd., Daegu-si (KR)
Filed on Jan. 8, 2021, as Appl. No. 17/144,416.
Claims priority of application No. 10-2020-0002429 (KR), filed on Jan. 8, 2020.
Prior Publication US 2021/0208495 A1, Jul. 8, 2021
Int. Cl. G03F 1/24 (2012.01); G03F 1/58 (2012.01); G03F 1/40 (2012.01); H01L 21/033 (2006.01)

CPC G03F 1/24 (2013.01) [G03F 1/40 (2013.01); G03F 1/58 (2013.01); H01L 21/0332 (2013.01); H01L 21/0337 (2013.01)]

18 Claims

1. A blankmask for EUV, comprising:

a substrate;

a reflection film formed on the substrate; and

an absorbing film formed on the reflection film,

wherein the absorbing film is constituted by an uppermost layer and a plurality of layers under the uppermost layer,

the plurality of layers contains Ta and are configured so that a content of N increases upward, and

the uppermost layer contains oxygen (O) and the plurality of layers do not contain oxygen (O).