US 11,815,633 B2
Apparatuses for radiation detection and methods of making them
Yurun Liu, Shenzhen (CN); and Peiyan Cao, Shenzhen (CN)
Assigned to SHENZHEN XPECTVISION TECHNOLOGY CO., LTD., Shenzhen (CN)
Filed by SHENZHEN XPECTVISION TECHNOLOGY CO., LTD., Shenzhen (CN)
Filed on Sep. 10, 2021, as Appl. No. 17/471,670.
Application 17/471,670 is a continuation of application No. PCT/CN2019/080403, filed on Mar. 29, 2019.
Prior Publication US 2021/0405221 A1, Dec. 30, 2021
Int. Cl. G01T 1/24 (2006.01); G01T 1/29 (2006.01)
CPC G01T 1/24 (2013.01) [G01T 1/2928 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method comprising:
forming a recess into a semiconductor substrate, wherein a portion of the semiconductor substrate extends into the recess and is surrounded by the recess;
depositing semiconductor nanocrystals into the recess, the semiconductor nanocrystals having a different composition from the semiconductor substrate;
forming a first doped semiconductor region in the semiconductor substrate;
forming a second doped semiconductor region in the semiconductor substrate;
wherein the first doped semiconductor region and the second doped semiconductor region form a p-n junction that separates the portion from the rest of the semiconductor substrate.