CPC G01T 1/24 (2013.01) [G01T 1/2928 (2013.01)] | 20 Claims |
1. A method comprising:
forming a recess into a semiconductor substrate, wherein a portion of the semiconductor substrate extends into the recess and is surrounded by the recess;
depositing semiconductor nanocrystals into the recess, the semiconductor nanocrystals having a different composition from the semiconductor substrate;
forming a first doped semiconductor region in the semiconductor substrate;
forming a second doped semiconductor region in the semiconductor substrate;
wherein the first doped semiconductor region and the second doped semiconductor region form a p-n junction that separates the portion from the rest of the semiconductor substrate.
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