CPC G01R 15/09 (2013.01) [G01R 21/01 (2013.01); H03F 3/19 (2013.01); H03K 5/24 (2013.01); H04B 17/101 (2015.01); H03F 2200/294 (2013.01); H03F 2200/451 (2013.01)] | 20 Claims |
1. A radio frequency (RF) power detector, comprising:
a first transistor of a first conductivity type having a first electrode coupled to an output node, a control electrode for receiving an input RF signal and a direct current (DC) bias voltage, and a second electrode;
a second transistor of a second conductivity type opposite the first conductivity type having a first electrode coupled to the first electrode of the first transistor, a control electrode coupled to the first electrode of the second transistor, and a second electrode coupled to a supply voltage;
a third transistor of the first conductivity type having a first electrode coupled to the output node, a control electrode for receiving the DC bias voltage and an additional DC bias voltage, and a second electrode;
a fourth transistor of the second conductivity type having a first electrode coupled to the first electrode of the third transistor, a control electrode coupled to the first electrode of the fourth transistor, and a second electrode coupled to the supply voltage; and
a comparator for comparing an output signal on the output node to a reference signal.
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