CPC C23C 16/0272 (2013.01) [B05D 1/60 (2013.01); B05D 7/52 (2013.01); B32B 7/02 (2013.01); B32B 7/025 (2019.01); B32B 7/04 (2013.01); B32B 15/00 (2013.01); B32B 15/04 (2013.01); C23C 16/0281 (2013.01); C23C 16/06 (2013.01); C23C 16/08 (2013.01); C23C 16/14 (2013.01); C23C 16/16 (2013.01); C23C 16/18 (2013.01); C23C 16/44 (2013.01); C23C 16/455 (2013.01); C23C 16/45525 (2013.01); C23C 16/45527 (2013.01); C23C 16/45555 (2013.01); C23C 16/45557 (2013.01); C23C 16/56 (2013.01); C23C 30/00 (2013.01); B82B 1/001 (2013.01); B82B 1/008 (2013.01); B82B 3/0009 (2013.01); B82B 3/0019 (2013.01); B82B 3/0038 (2013.01); B82B 3/0066 (2013.01); B82B 3/0095 (2013.01); Y10T 428/1284 (2015.01); Y10T 428/12556 (2015.01); Y10T 428/12806 (2015.01); Y10T 428/12826 (2015.01); Y10T 428/12833 (2015.01); Y10T 428/2495 (2015.01); Y10T 428/24967 (2015.01); Y10T 428/24975 (2015.01); Y10T 428/26 (2015.01); Y10T 428/261 (2015.01); Y10T 428/263 (2015.01); Y10T 428/264 (2015.01); Y10T 428/265 (2015.01); Y10T 428/268 (2015.01)] | 10 Claims |
1. A two-dimensional elementary metal structure comprising:
an elementary metal layer formed using ALD (Atomic Layer Deposition) having 3 to 15 atomic layers and having a two-dimensional structure, wherein the elementary metal layer is formed of a metal selected from Group 4 metals, Group 5 metals, and Group 6 metals; and
organic molecular layers provided on a top surface and a bottom surface of the elementary metal layer,
wherein each of the organic molecular layers include a bifunctional group or trifunctional group including a chalcogen element and are formed using MLD (Molecular Layer Deposition),
wherein the elementary metal layer is chemically bonded to the chalcogen element of the organic molecular layers,
wherein the elementary metal layer has a metallic property according to X-ray photoelectron spectroscopy (XPS) analysis even though the elementary metal layer is chemically bonded to the chalcogen element of the organic molecular layers, and
wherein the elementary metal layer has semiconductor properties.
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