CPC C04B 41/5133 (2013.01) [C04B 35/547 (2013.01); C04B 41/009 (2013.01); C04B 41/0072 (2013.01); C04B 41/4517 (2013.01); C04B 41/4521 (2013.01)] | 9 Claims |
1. A method of forming a doped substrate, comprising:
(a) heating a substrate comprising a layer of a dopant on at least one surface to a predetermined temperature;
(b) applying a predetermined degree of isostatic external pressure on the at least one surface of said substrate at said predetermined temperature for a time sufficient to induce migration of the dopant into the substrate to provide a doped substrate; and
(c) removing the isostatic pressure and cooling the doped substrate to about room temperature,
wherein the substrate is selected from the group consisting of Yttrium Lithium Fluoride (YLF), Yttrium orthovanadate (Nd:YVO4), Neodymium doped yttrium calcium oxoborate Nd:YCa4O(BO3)3, lithium strontium (or calcium) aluminum fluoride (Ce:LiSAF, Ce:LiCAF), chrysoberyl (alexandrite), Gallium Nitride (GaN), Indium Gallium Nitride (InGaN), Aluminum Gallium Indium Nitride (InGaInP), Aluminum Gallium Arsenide Phosphide (InGaAsP), Lithium niobate (LiNbO3), Potassium Niobate (KNbO3), Strontium Barium Niobate (SBN), Yttrium Scandium Gallium Garnet (YSGG), Yttrium Vanadate (YVO4), Terbium Gallium Garnet (Tb3Ga5O12), Potassium Gadolinium Tungstate (KGW), Forsterite (Mg2SiO4), Barium Yttrium Fluoride (BaY2F5), Barium Yttrium Lutetium Fluoride (BaYLuF5), and combinations thereof,
wherein the dopant is one or more atomic or ionic species of elements selected from the group consisting of gold, iridium, molybdenum, niobium, palladium, rhenium, rhodium, ruthenium, titanium, tungsten, lanthanum, praseodymium, europium, gadolinium, lutetium, or combinations thereof.
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