| US 7,449,734 B2 | ||
| Junction semiconductor device and method for manufacturing the same | ||
| Ken-ichi Nonaka, Wako (Japan); Hideki Hashimoto, Wako (Japan); Seiichi Yokoyama, Wako (Japan); Kensuke Iwanaga, Wako (Japan); and Yoshimitsu Saito, Wako (Japan) | ||
| Assigned to Honda Motor Co., Ltd., Tokyo (Japan) | ||
| Filed on Mar. 23, 2006, as Appl. No. 11/386,850. | ||
| Claims priority of application No. P2005-084693 (JP), filed on Mar. 23, 2005. | ||
| Prior Publication US 2006/0214200 A1, Sep. 28, 2006 | ||
| Int. Cl. H01L 29/76 (2006.01); H01L 29/94 (2006.01); H01L 31/062 (2006.01); H01L 31/119 (2006.01) | ||
| U.S. Cl. 257—288 [257/213; 257/347; 257/352; 257/E21.17; 257/E21.051; 257/E21.123; 257/E21.218; 257/E21.229; 257/E21.416] | 7 Claims |
| 1. A junction semiconductor device comprising:
a drain region comprising a low-resistance layer of a first conductivity type formed on one surface of a semiconductor crystal,
a source region comprising a low-resistance layer of a first conductivity type formed on another surface of said semiconductor
crystal,
a gate region of a second conductivity type formed on a periphery of said source region,
a high-resistance layer of a first conductivity type between said source region and said drain region,
a recombination-inhibiting semiconductor layer of a second conductivity type provided in the vicinity of the surface of said
semiconductor crystal between said gate region and said source region, so as to provide an increased electric field for one
of minority carriers injected from the pate region and majority carriers injected from the source region, and thereby to distance
said minority and said majority carriers, respectively, from said surface of said semiconductor crystal,
wherein said recombination-inhibiting semiconductor layer has an impurity concentration that is lower than an impurity concentration
of said gate region.
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