US 7,449,348 B1
Feedback control of imprint mask feature profile using scatterometry and spacer etchback
Srikanteswara Dakshina-Murthy, Wappingers Falls, N.Y. (US); Bhanwar Singh, Morgan Hill, Calif. (US); Ramkumar Subramanian, Sunnyvale, Calif. (US); and Khoi A. Phan, San Jose, Calif. (US)
Assigned to Advanced Micro Devices, Inc., Sunnyvale, Calif. (US)
Filed on Jun. 02, 2004, as Appl. No. 10/858,605.
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/00 (2006.01)
U.S. Cl. 438—7  [438/4; 438/5; 438/12; 257/E21.525; 257/E21.527] 14 Claims
OG exemplary drawing
 
1. A method for providing feedback control of imprint mask feature profile, comprising:
monitoring an imprint mask;
detecting at least one retrograde profile having a negative slope on mask features wherein an angle between a horizontal surface of the mask and an outerside of at least one of the mask features is acute; and
altering the imprint mask to compensate for the at least one retrograde profile such that wafer material is mitigated from being torn loose upon removal of the imprint mask from a wafer being imprinted therewith.