CPC H10N 50/80 (2023.02) [H10B 61/00 (2023.02); H10N 50/01 (2023.02)] | 5 Claims |
1. A magnetoresistive random access memory cell, comprising:
a substrate;
a bottom electrode layer on said substrate;
a magnetic tunnel junction stack on said bottom electrode layer; and
a top electrode layer on said magnetic tunnel junction stack, wherein a material of said top electrode layer is titanium nitride, and a percentage of nitrogen in said titanium nitride gradually decreases from a top surface of top electrode layer to a bottom surface of top electrode layer; and
a hard mask layer disposed on said top electrode layer, wherein a material of said hard mask layer is tantalum or tantalum nitride.
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