CPC H10N 70/231 (2023.02) [G11C 13/003 (2013.01); G11C 13/0004 (2013.01); G11C 13/004 (2013.01); G11C 13/0069 (2013.01); G11C 13/0097 (2013.01); H10B 63/24 (2023.02); H10B 63/84 (2023.02); H10N 70/023 (2023.02); H10N 70/066 (2023.02); H10N 70/826 (2023.02); H10N 70/828 (2023.02); H10N 70/8413 (2023.02); H10N 70/8828 (2023.02); G11C 2213/54 (2013.01); G11C 2213/71 (2013.01); G11C 2213/72 (2013.01)] | 8 Claims |
1. A phase-change memory having a highly integrated three-dimensional architecture, the phase-change memory comprising:
at least one horizontal electrode extending in a first direction and a vertical electrode extending in a second direction perpendicular to the first direction;
at least one phase-change layer extending in the first direction to be in contact with the at least one horizontal electrode, respectively, to change a crystal state of the at least one phase-change layer by heat supplied by the at least one horizontal electrode and the vertical electrode; and
a selector extending in the second direction to be in contact with the at least one phase-change layer and the vertical electrode, respectively, and selectively switching the heat supplied by the at least one horizontal electrode and the vertical electrode to the at least one phase-change layer to change a crystal state of a target phase-change layer of the at least one phase-change layer,
wherein the selector is formed of a compound containing a transition metal in a phase-change material to have a high resistance when a crystal state of the selector is crystalline and to have a low resistance when the crystal state of the selector is non-crystalline.
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