US 11,812,661 B2
Phase-change memory device having reversed phase-change characteristics and phase-change memory having highly integrated three-dimensional architecture using same
Yun Heub Song, Seoul (KR)
Assigned to Samsung Electronics Co., Ltd., Gyeonggi-do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Oct. 7, 2021, as Appl. No. 17/496,363.
Application 17/496,363 is a division of application No. 16/620,577, granted, now 11,195,996, previously published as PCT/KR2018/006317, filed on Jun. 1, 2018.
Claims priority of application No. 10-2017-0070892 (KR), filed on Jun. 7, 2017; application No. 10-2017-0082386 (KR), filed on Jun. 29, 2017; and application No. 10-2017-0160268 (KR), filed on Nov. 28, 2017.
Prior Publication US 2022/0029094 A1, Jan. 27, 2022
Int. Cl. G11C 11/00 (2006.01); H10N 70/20 (2023.01); G11C 13/00 (2006.01); H10B 63/00 (2023.01); H10N 70/00 (2023.01)
CPC H10N 70/231 (2023.02) [G11C 13/003 (2013.01); G11C 13/0004 (2013.01); G11C 13/004 (2013.01); G11C 13/0069 (2013.01); G11C 13/0097 (2013.01); H10B 63/24 (2023.02); H10B 63/84 (2023.02); H10N 70/023 (2023.02); H10N 70/066 (2023.02); H10N 70/826 (2023.02); H10N 70/828 (2023.02); H10N 70/8413 (2023.02); H10N 70/8828 (2023.02); G11C 2213/54 (2013.01); G11C 2213/71 (2013.01); G11C 2213/72 (2013.01)] 8 Claims
OG exemplary drawing
 
1. A phase-change memory having a highly integrated three-dimensional architecture, the phase-change memory comprising:
at least one horizontal electrode extending in a first direction and a vertical electrode extending in a second direction perpendicular to the first direction;
at least one phase-change layer extending in the first direction to be in contact with the at least one horizontal electrode, respectively, to change a crystal state of the at least one phase-change layer by heat supplied by the at least one horizontal electrode and the vertical electrode; and
a selector extending in the second direction to be in contact with the at least one phase-change layer and the vertical electrode, respectively, and selectively switching the heat supplied by the at least one horizontal electrode and the vertical electrode to the at least one phase-change layer to change a crystal state of a target phase-change layer of the at least one phase-change layer,
wherein the selector is formed of a compound containing a transition metal in a phase-change material to have a high resistance when a crystal state of the selector is crystalline and to have a low resistance when the crystal state of the selector is non-crystalline.