US 11,812,627 B2
Quantum dot device and electronic device
Hongkyu Seo, Anyang-si (KR); Eun Joo Jang, Suwon-si (KR); Moon Gyu Han, Suwon-si (KR); Tae Ho Kim, Seongnam-si (KR); and Dae Young Chung, Suwon-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Gyeonggi-do (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Oct. 27, 2021, as Appl. No. 17/512,067.
Application 17/512,067 is a continuation of application No. 16/296,505, filed on Mar. 8, 2019, granted, now 11,171,299, issued on Nov. 9, 2021.
Claims priority of application No. 10-2018-0028285 (KR), filed on Mar. 9, 2018; and application No. 10-2019-0025980 (KR), filed on Mar. 6, 2019.
Prior Publication US 2022/0052287 A1, Feb. 17, 2022
Int. Cl. H10K 50/115 (2023.01); C09K 11/88 (2006.01); H10K 50/11 (2023.01); H10K 50/15 (2023.01); H10K 50/16 (2023.01); H10K 50/18 (2023.01); H10K 50/17 (2023.01); H10K 71/00 (2023.01); B82Y 20/00 (2011.01); H10K 101/40 (2023.01); H10K 101/30 (2023.01)
CPC H10K 50/115 (2023.02) [C09K 11/883 (2013.01); H10K 50/11 (2023.02); H10K 50/15 (2023.02); H10K 50/16 (2023.02); H10K 50/167 (2023.02); H10K 50/171 (2023.02); H10K 50/18 (2023.02); H10K 71/00 (2023.02); B82Y 20/00 (2013.01); H10K 2101/30 (2023.02); H10K 2101/40 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A quantum dot device, comprising
an anode and a cathode;
a quantum dot layer between the anode and the cathode, the quantum dot layer including a plurality of quantum dots; and
a hole transport layer located between the anode and the quantum dot layer,
wherein the hole transport layer comprises a hole transport material and an electron transport material, and
the hole transport material comprises a polymer compound.
 
7. A quantum dot device, comprising:
an anode and a cathode;
a quantum dot layer located between the anode and the cathode, the quantum dot layer comprising a plurality of quantum dots; and
a hole transport layer located between the anode and the quantum dot layer,
wherein the hole transport layer comprises a hole transport material and an electron transport material,
wherein the highest occupied molecular orbital (HOMO) energy level of the hole transport material is about 5.4 electron volts to about 7.0 electron volts.
 
12. A quantum dot device, comprising:
an anode and a cathode;
a quantum dot layer located between the anode and the cathode, wherein the quantum dot layer comprises a plurality of quantum dots; and
a hole transport layer located between the anode and the quantum dot layer,
wherein the hole transport layer comprises
an organic electron transport material having a lowest unoccupied molecular orbital (LUMO) energy level of about 2.7 electron volts to about 3.5 electron volts,
an n-type metal oxide,
or a combination thereof.