CPC H10K 50/115 (2023.02) [C09K 11/883 (2013.01); H10K 50/11 (2023.02); H10K 50/15 (2023.02); H10K 50/16 (2023.02); H10K 50/167 (2023.02); H10K 50/171 (2023.02); H10K 50/18 (2023.02); H10K 71/00 (2023.02); B82Y 20/00 (2013.01); H10K 2101/30 (2023.02); H10K 2101/40 (2023.02)] | 20 Claims |
1. A quantum dot device, comprising
an anode and a cathode;
a quantum dot layer between the anode and the cathode, the quantum dot layer including a plurality of quantum dots; and
a hole transport layer located between the anode and the quantum dot layer,
wherein the hole transport layer comprises a hole transport material and an electron transport material, and
the hole transport material comprises a polymer compound.
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7. A quantum dot device, comprising:
an anode and a cathode;
a quantum dot layer located between the anode and the cathode, the quantum dot layer comprising a plurality of quantum dots; and
a hole transport layer located between the anode and the quantum dot layer,
wherein the hole transport layer comprises a hole transport material and an electron transport material,
wherein the highest occupied molecular orbital (HOMO) energy level of the hole transport material is about 5.4 electron volts to about 7.0 electron volts.
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12. A quantum dot device, comprising:
an anode and a cathode;
a quantum dot layer located between the anode and the cathode, wherein the quantum dot layer comprises a plurality of quantum dots; and
a hole transport layer located between the anode and the quantum dot layer,
wherein the hole transport layer comprises
an organic electron transport material having a lowest unoccupied molecular orbital (LUMO) energy level of about 2.7 electron volts to about 3.5 electron volts,
an n-type metal oxide,
or a combination thereof.
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