US 11,812,621 B2
Three terminal tandem solar generation unit
Florian Hilt, Issy les Moulineaux (FR); Philip Schulz, Massy (FR); and Etienne Drahi, Paris (FR)
Appl. No. 17/415,692
Filed by TOTAL SE, Courbevoie (FR); ELECTRICITE DE FRANCE, Paris (FR); CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE, Paris (FR); ECOLE POLYTECHNIQUE, Palaiseau (FR); INSTITUT PHOTOVOLTAIQUE D'ILE DE FRANCE, Palaiseau (FR); and L'AIR LIQUIDE SOCIETE ANONYME, Paris (FR)
PCT Filed Dec. 16, 2019, PCT No. PCT/EP2019/085326
§ 371(c)(1), (2) Date Jun. 17, 2021,
PCT Pub. No. WO2020/127030, PCT Pub. Date Jun. 25, 2020.
Claims priority of application No. 18306778 (EP), filed on Dec. 20, 2018.
Prior Publication US 2022/0045130 A1, Feb. 10, 2022
Int. Cl. H10K 30/57 (2023.01); H01L 31/0475 (2014.01); H01L 31/0224 (2006.01); H01L 31/078 (2012.01)
CPC H10K 30/57 (2023.02) [H01L 31/022433 (2013.01); H01L 31/022441 (2013.01); H01L 31/0475 (2014.12); H01L 31/078 (2013.01)] 12 Claims
OG exemplary drawing
 
1. A three terminal tandem solar generation unit comprising:
a first absorbing layer made of a compound having a perovskite type crystalline structure and comprising a front side and a back side,
a second absorbing layer comprising a front side and a back side,
a first and a second interdigitated front contacts arranged on the front side of the first absorbing layer, the first front contact having a first polarity and the second front contact having a second polarity,
a back contact having the first or the second polarity arranged on the back side of the second absorbing layer,
an interface layer arranged between the first and the second absorbing layers comprising a first semiconductor sub-layer doped according to the first polarity and a second sub-layer doped according to the second polarity and configured for enabling carriers associated with a polarity different than the polarity of the back contact to be transferred from the second absorbing layer to the first absorbing layer to be collected by the first front contact or second front contact having a polarity different than the polarity of the back contact,
wherein the first polarity corresponds to the p-type polarity having holes as associated carriers and the second polarity corresponds to the n-type polarity having electrons as associated carriers; and
wherein the back contact has the first polarity and comprises a back surface field and the second absorbing layer is doped according to the first polarity.