US 11,812,609 B2
Three-dimensional semiconductor device having a first main separation structure and a second main separation structure on a lower structure
Byoung Il Lee, Seoul (KR); Yu Jin Seo, Daejeon (KR); and Jun Eon Jin, Suwon-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Mar. 31, 2021, as Appl. No. 17/218,267.
Application 17/218,267 is a continuation of application No. 16/227,985, filed on Dec. 20, 2018, granted, now 10,978,465.
Claims priority of application No. 10-2018-0057306 (KR), filed on May 18, 2018.
Prior Publication US 2021/0242229 A1, Aug. 5, 2021
Int. Cl. H10B 43/10 (2023.01); H01L 23/522 (2006.01); H10B 41/10 (2023.01); H01L 23/528 (2006.01); H10B 41/27 (2023.01); H10B 41/35 (2023.01); H10B 43/27 (2023.01); H10B 43/35 (2023.01)
CPC H10B 43/10 (2023.02) [H01L 23/5226 (2013.01); H01L 23/5283 (2013.01); H10B 41/10 (2023.02); H10B 41/27 (2023.02); H10B 41/35 (2023.02); H10B 43/27 (2023.02); H10B 43/35 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a lower structure;
a first main separation structure and a second main separation structure spaced apart from each other and on the lower structure;
a stacked structure between the first main separation structure and the second main separation structure, and including a memory array region and an extended region;
vertical structures penetrating through the memory array region of the stacked structure;
first auxiliary separation structures penetrating through a first region of the extended region of the stacked structure, between the first main separation structure and the second main separation structure, and sequentially arranged in a first direction parallel to an upper surface of the lower structure; and
second auxiliary separation structures penetrating through a second region of the extended region of the stacked structure, between the first main separation structure and second main separation structure, and sequentially arranged in the first direction;
wherein each of the first and second auxiliary separation structures has a linear shape extending in a second direction perpendicular to the first direction,
wherein the stacked structure includes word lines and string selection lines on the word lines,
wherein a number of the string selection lines at a first height level is N,
wherein a number of the second auxiliary separation structures sequentially arranged in the first direction is N−2, and
wherein N is an integer greater than three (3).