CPC H10B 12/00 (2023.02) [G11C 11/4096 (2013.01); H01L 27/124 (2013.01); H01L 27/1207 (2013.01); H01L 27/1225 (2013.01); H01L 27/1255 (2013.01); H01L 27/1266 (2013.01)] | 18 Claims |
1. A method of forming a gain cell memory device comprising:
forming over a first substrate, a first region comprising a word line driver, a read circuitry, and active fins;
forming a dielectric region over the first region;
forming at least one storage region in the dielectric region;
forming a layer of at least one write circuit in contact with the at least one storage region;
bonding a structure onto a surface of the dielectric region; and
removing the first substrate to expose the active fins.
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