US 11,812,175 B2
Image sensor and method of operating the same
Munhwan Kim, Seoul (KR); Youngsun Oh, Hwaseong-si (KR); Jongyoon Shin, Suwon-si (KR); Honghyun Jeon, Suwon-si (KR); and Hana Choi, Seongnam-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Feb. 16, 2022, as Appl. No. 17/673,390.
Claims priority of application No. 10-2021-0059025 (KR), filed on May 7, 2021.
Prior Publication US 2022/0360731 A1, Nov. 10, 2022
Int. Cl. H04N 25/766 (2023.01); H01L 27/146 (2006.01); H04N 25/11 (2023.01); H04N 25/75 (2023.01); H04N 25/79 (2023.01); H04N 25/778 (2023.01)
CPC H04N 25/766 (2023.01) [H01L 27/1463 (2013.01); H01L 27/14614 (2013.01); H01L 27/14621 (2013.01); H01L 27/14627 (2013.01); H01L 27/14645 (2013.01); H04N 25/11 (2023.01); H04N 25/75 (2023.01); H04N 25/778 (2023.01); H04N 25/79 (2023.01)] 20 Claims
OG exemplary drawing
 
1. A method of operating an image sensor including a dual conversion gain transistor provided between and connected to a first charge detection node and a second charge detection node, and a reset transistor provided between and connected to the second charge detection node and a pixel power voltage, the method comprising:
performing a first reset operation to reset the first charge detection node and the second charge detection node;
turning off the dual conversion gain transistor and reading out a first reset signal from the first charge detection node;
transferring an electric charge accumulated in a photoelectric conversion device, to the first charge detection node and reading out a first pixel signal from the first charge detection node;
turning on the dual conversion gain transistor and reading out a second pixel signal from the first charge detection node;
performing a second reset operation to reset the first charge detection node and the second charge detection node; and
reading out a second reset signal from the first charge detection node.