US 11,811,221 B2
Electrostatic discharge protection device
François Tailliet, Fuveau (FR)
Assigned to STMicroelectronics (Rousset) SAS, Rousset (FR)
Filed by STMicroelectronics (Rousset) SAS, Rousset (FR)
Filed on Dec. 9, 2021, as Appl. No. 17/643,530.
Claims priority of application No. 2100868 (FR), filed on Jan. 29, 2021.
Prior Publication US 2022/0247169 A1, Aug. 4, 2022
Int. Cl. H02H 9/04 (2006.01)
CPC H02H 9/04 (2013.01) 20 Claims
OG exemplary drawing
 
1. An electronic circuit comprising:
a plurality of first clipping circuits, each comprising:
a bipolar transistor, having a first conduction path coupled between a first node and a common second node; and
a second resistor coupled between a control terminal of the bipolar transistor and the common second node, wherein the second resistor is separate from the bipolar transistor;
a plurality of first resistors, each coupled between a respective one of the first nodes and a respective third node;
a second clipping circuit, shared by each of the first clipping circuits, and comprising a metal-oxide-semiconductor field-effect transistor having a second conduction path coupled between each third node and the common second node; and
a plurality of protected devices, each coupled to a respective one of the third nodes;
wherein at least one of the third nodes is coupled to a terminal of the second clipping circuit by a respective diode; and
wherein another one of the third nodes is connected to the terminal of the second clipping circuit without an intervening diode.