US 11,810,993 B2
Solar cell, multi-junction solar cell, solar cell module, and photovoltaic power generation system
Kazushige Yamamoto, Yokohama Kanagawa (JP); Soichiro Shibasaki, Nerima Tokyo (JP); Mutsuki Yamazaki, Yokohama Kanagawa (JP); Naoyuki Nakagawa, Setagaya Tokyo (JP); and Sara Yoshio, Yokohama Kanagawa (JP)
Assigned to KABUSHIKI KAISHA TOSHIBA, Tokyo (JP); and TOSHIBA ENERGY SYSTEMS & SOLUTIONS CORPORATION, Kawasaki (JP)
Filed by KABUSHIKI KAISHA TOSHIBA, Tokyo (JP); and TOSHIBA ENERGY SYSTEMS & SOLUTIONS CORPORATION, Kawasaki (JP)
Filed on Feb. 25, 2020, as Appl. No. 16/799,987.
Application 16/799,987 is a continuation of application No. PCT/JP2018/034689, filed on Sep. 19, 2018.
Prior Publication US 2020/0194608 A1, Jun. 18, 2020
Int. Cl. H01L 31/0725 (2012.01); H01L 31/032 (2006.01); H01L 31/028 (2006.01); H01L 31/0272 (2006.01); H01L 33/34 (2010.01)
CPC H01L 31/0725 (2013.01) [H01L 31/0323 (2013.01); H01L 31/028 (2013.01); H01L 31/02725 (2013.01); H01L 33/343 (2013.01)] 15 Claims
OG exemplary drawing
 
1. A solar cell comprising:
a p-electrode;
a p-type light-absorbing layer directly in contact with the p-electrode;
an n-type layer; and
an n-electrode, wherein
the n-type layer is disposed between the p-type light-absorbing layer and the n-electrode, and
a region in the p-type light absorbing layer from an interface between the p-type light-absorbing layer and the p-electrode toward the n-type layer is a p+ type region including a p-type dopant with a depth of 30 nm to 70 nm,
wherein the p-type light-absorbing layer is a semiconductor layer made of an oxide of metal containing Cu,
a maximum concentration of the p-type dopant in the p+ type region is 5.0×1019 atoms/cm3 or more and 1.0×1021 atoms/cm3 or less,
an average concentration of the p-type dopant in the p+ type region is 1.0×1019 atoms/cm3 or more and 1.0×1020 atoms/cm3 or less; and
the p-type dopant includes Si.