US 11,810,989 B2
Fin-based photodetector structure
Ajey Poovannummoottil Jacob, Watervliet, NY (US); Yusheng Bian, Ballston, NY (US); and Steven Shank, Jericho, VT (US)
Assigned to GLOBALFOUNDRIES U.S. Inc., Malta, NY (US)
Filed by GlobalFoundries U.S. Inc., Malta, NY (US)
Filed on Oct. 19, 2021, as Appl. No. 17/504,614.
Application 17/504,614 is a continuation of application No. 16/740,719, filed on Jan. 13, 2020, granted, now 11,177,404.
Prior Publication US 2022/0037545 A1, Feb. 3, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 31/0352 (2006.01); H01L 31/0232 (2014.01); H01L 31/18 (2006.01); H01L 31/028 (2006.01); H01L 31/103 (2006.01)
CPC H01L 31/035281 (2013.01) [H01L 31/028 (2013.01); H01L 31/02327 (2013.01); H01L 31/103 (2013.01); H01L 31/1804 (2013.01); H01L 31/1872 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A photodetector, comprising:
a waveguide structure defined in a semiconductor material, the waveguide structure comprising a plurality of first fins, wherein each adjacent pair of the plurality of first fins is separated by a trench;
a detector structure positioned on the waveguide structure, wherein a portion of the detector structure is positioned laterally between the plurality of first fins, wherein the detector structure comprises a single crystal semiconductor material;
a diffusion region that extends from a bottom surface of the trench into the semiconductor material, wherein the diffusion region comprises atoms of the single crystal semiconductor material of the detector structure;
at least one contact region positioned in the semiconductor material; and
a contact region positioned in the detector structure.