US 11,810,988 B2
Integrated infrared circular polarization detector with high extinction ratio and design method thereof
Jing Zhou, Shanghai (CN); Zeshi Chu, Shanghai (CN); Xu Dai, Shanghai (CN); Yu Yu, Shanghai (CN); Mengke Lan, Shanghai (CN); Shangkun Guo, Shanghai (CN); Jie Deng, Shanghai (CN); Xiaoshuang Chen, Shanghai (CN); Qingyuan Cai, Shanghai (CN); Fangzhe Li, Shanghai (CN); and Zhaoyu Ji, Shanghai (CN)
Assigned to Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai (CN)
Appl. No. 17/762,352
Filed by SHANGHAI INSTITUTE OF TECHNICAL PHYSICS, CHINESE ACADEMY OF SCIENCES, Shanghai (CN)
PCT Filed Nov. 10, 2020, PCT No. PCT/CN2020/127783
§ 371(c)(1), (2) Date Mar. 21, 2022,
PCT Pub. No. WO2021/169401, PCT Pub. Date Sep. 2, 2021.
Claims priority of application No. 202010126506.2 (CN), filed on Feb. 28, 2020.
Prior Publication US 2022/0393049 A1, Dec. 8, 2022
Int. Cl. H01L 31/0352 (2006.01); H01L 31/0304 (2006.01)
CPC H01L 31/035236 (2013.01) [H01L 31/03046 (2013.01)] 2 Claims
OG exemplary drawing
 
1. An integrated infrared circular polarization detector, wherein
the detector structurally comprises a bottom metal reflective surface (1), a bottom electrode layer (2), a quantum well layer (3), a top electrode layer (4) and a two-dimensional chiral metamaterial layer (5) in sequence from bottom to top, the two-dimensional chiral metamaterial layer (5) is comprised of Z-shaped antenna structures arranged periodically in an x-direction and a y-direction, so as to excite a surface plasmon polariton wave upon receiving circularly polarized light with selected handedness and not excite the surface plasmon polariton wave upon receiving circularly polarized light with opposite handedness;
the bottom metal reflective plane (1) is a metal reflective layer with a thickness of h1 which is not less than twice the skin depth of an electromagnetic wave in the metal reflective layer; and the metal reflective plane (1) is made of a highly conductive metal;
the bottom electrode layer (2) and the top electrode layer (4) are GaAs heavily doped with silicon at a doping concentration of 2×1017 cm−3; and
the quantum well layer (3) is made of a single-stack or a multi-stack semiconductor quantum well composed of GaAs/AlxGa1-xAs or InGaAs/GaAs.