CPC H01L 29/735 (2013.01) [H01L 29/0808 (2013.01); H01L 29/0821 (2013.01); H01L 29/41708 (2013.01); H01L 29/6625 (2013.01); H01L 29/737 (2013.01)] | 19 Claims |
1. A structure comprising:
an intrinsic base comprising semiconductor material in a channel region of a semiconductor substrate;
an extrinsic base vertically above the intrinsic base;
a raised collector region on the semiconductor substrate and laterally connected to the intrinsic base; and
a raised emitter region on the semiconductor substrate and laterally connected to the intrinsic base,
wherein the intrinsic base is recessed in the channel region of the semiconductor substrate.
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