US 11,810,969 B2
Lateral bipolar transistor
Haiting Wang, Clifton Park, NY (US); Alexander Derrickson, Troy, NY (US); Jagar Singh, Clifton Park, NY (US); Vibhor Jain, Williston, VT (US); Andreas Knorr, Saratoga Springs, NY (US); Alexander Martin, Greenfield Center, NY (US); Judson R. Holt, Ballston Lake, NY (US); and Zhenyu Hu, Clifton Park, NY (US)
Assigned to GLOBALFOUNDRIES U.S. INC., Malta, NY (US)
Filed by GLOBALFOUNDRIES U.S. Inc., Malta, NY (US)
Filed on Oct. 25, 2021, as Appl. No. 17/509,384.
Claims priority of provisional application 63/237,250, filed on Aug. 26, 2021.
Prior Publication US 2023/0061219 A1, Mar. 2, 2023
Int. Cl. H01L 29/735 (2006.01); H01L 29/66 (2006.01); H01L 29/737 (2006.01); H01L 29/08 (2006.01); H01L 29/417 (2006.01)
CPC H01L 29/735 (2013.01) [H01L 29/0808 (2013.01); H01L 29/0821 (2013.01); H01L 29/41708 (2013.01); H01L 29/6625 (2013.01); H01L 29/737 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A structure comprising:
an intrinsic base comprising semiconductor material in a channel region of a semiconductor substrate;
an extrinsic base vertically above the intrinsic base;
a raised collector region on the semiconductor substrate and laterally connected to the intrinsic base; and
a raised emitter region on the semiconductor substrate and laterally connected to the intrinsic base,
wherein the intrinsic base is recessed in the channel region of the semiconductor substrate.