CPC H01L 29/6681 (2013.01) [H01L 27/0886 (2013.01); H01L 29/0649 (2013.01); H01L 29/41791 (2013.01); H01L 29/785 (2013.01)] | 10 Claims |
1. A semiconductor structure, comprising:
a substrate, including a first region and a second region;
a plurality of fins, formed on the first region of the substrate;
a first isolation structure, formed on the first region between adjacent fins and on the second region of the substrate;
a second isolation structure, formed in each fin and in the first isolation structure, over the first region of the substrate; and
a power rail, formed in the isolation structure and partially in the substrate of the second region, a top surface of the power rail being higher than a top surface of the plurality of fins.
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