US 11,810,965 B2
Fin semiconductor device and method for making the same
Qiuming Huang, Shanghai (CN); Jun Tan, Shanghai (CN); and Qiang Yan, Shanghai (CN)
Assigned to SHANGHAI HUALI INTEGRATED CIRCUIT CORPORATION, Shanghai (CN)
Filed by SHANGHAI HUALI INTEGRATED CIRCUIT CORPORATION, Shanghai (CN)
Filed on May 21, 2021, as Appl. No. 17/327,571.
Claims priority of application No. 202010474867.6 (CN), filed on May 29, 2020.
Prior Publication US 2021/0376128 A1, Dec. 2, 2021
Int. Cl. H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 29/786 (2006.01)
CPC H01L 29/66742 (2013.01) [H01L 21/0259 (2013.01); H01L 21/02236 (2013.01); H01L 29/0665 (2013.01); H01L 29/42392 (2013.01); H01L 29/78696 (2013.01)] 8 Claims
OG exemplary drawing
 
1. A method for manufacturing a fin semiconductor device, comprising steps of:
providing a substrate, wherein a fin channel base is patterned on and in contact with the substrate;
epitaxially growing a top part of the fin channel base and extending the top part of the fin channel base sideways and upward to form a fin channel core;
forming a first barrier layer at two sides of the fin channel base on the substrate, wherein a top surface of the first barrier layer is lower than a top surface of the fin channel base;
forming a second barrier layer on the first barrier layer, wherein a top surface of the second barrier layer is above the top surface of the fin channel base, wherein a gap is provided between the second barrier layer and each side of the fin channel base;
performing, on the first barrier layer, the epitaxial growth of the top part of the fin channel base in the gap by using the second barrier layer as side walls, to extend the top part of the fin channel base sideways and upward;
oxidizing the fin channel base to form a fin channel structure, wherein the fin channel structure comprises the fin channel core surrounded with an oxide layer at the top part of the fin channel base and an intermediate part of the fin channel base under the top part; and
removing the oxide layer to expose the fin channel core, wherein the fin channel core suspends over the substrate.