US 11,810,960 B2
Contact structures in semiconductor devices
Sung-Li Wang, Zhubei (TW); Hsu-Kai Chang, Hsinchu (TW); Jhih-Rong Huang, Hsinchu (TW); Yen-Tien Tung, Hsinchu (TW); Chia-Hung Chu, Taipei (TW); Tzer-Min Shen, Hsinchu (TW); and Pinyen Lin, Rochester, NY (US)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Mar. 10, 2021, as Appl. No. 17/197,892.
Claims priority of provisional application 63/059,544, filed on Jul. 31, 2020.
Prior Publication US 2022/0037500 A1, Feb. 3, 2022
Int. Cl. H01L 29/45 (2006.01); H01L 21/285 (2006.01); H01L 29/08 (2006.01); H01L 29/417 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 21/8234 (2006.01)
CPC H01L 29/45 (2013.01) [H01L 21/28518 (2013.01); H01L 21/823418 (2013.01); H01L 29/0847 (2013.01); H01L 29/41791 (2013.01); H01L 29/66795 (2013.01); H01L 29/7839 (2013.01); H01L 29/7851 (2013.01)] 20 Claims
OG exemplary drawing
 
17. A semiconductor device, comprising:
a fin structure disposed on a substrate;
a source/drain (S/D) region disposed on the fin structure; and
a contact structure, comprising:
a first silicide layer, disposed on the S/D region, comprising:
a first metal,
a second metal different from the first metal, and
a faceted surface;
a second silicide layer comprising the second metal disposed on the first silicide layer, wherein the faceted surface is in contact with the second silicide layer; and
a contact plug disposed on the second silicide layer.