US 11,810,958 B2
Transistor component having gate electrodes and field electrodes
Felix Buth, Munich (DE); Margarete Deckers, Munich (DE); Christian Feuerbaum, Munich (DE); Uwe Schmalzbauer, Siegertsbrunn (DE); and Markus Zundel, Egmating (DE)
Assigned to Infineon Technologies AG, Neubiberg (DE)
Filed by Infineon Technologies AG, Neubiberg (DE)
Filed on Aug. 12, 2021, as Appl. No. 17/400,213.
Claims priority of application No. 102020121333.6 (DE), filed on Aug. 13, 2020.
Prior Publication US 2022/0052171 A1, Feb. 17, 2022
Int. Cl. H01L 29/423 (2006.01); H01L 29/06 (2006.01); H01L 29/78 (2006.01); H01L 29/40 (2006.01)
CPC H01L 29/4236 (2013.01) [H01L 29/0696 (2013.01); H01L 29/404 (2013.01); H01L 29/4238 (2013.01); H01L 29/7813 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A transistor component, comprising:
a plurality of gate electrodes and a plurality of field electrodes, wherein in each case one of the plurality of gate electrodes and one of the plurality of field electrodes are arranged one above another in a vertical direction in a common trench of a semiconductor body;
a gate pad to which the plurality of gate electrodes are connected; and
a source metallization arranged above the semiconductor body,
wherein the plurality of field electrodes comprise a first group of field electrodes,
wherein the field electrodes of the first group comprise at least one contact section,
wherein the at least one contact section is arranged between two sections of a gate electrode arranged in the same trench and is connected to the source metallization,
wherein the two sections of the gate electrode are separated from one another in a region of the contact section, and
wherein at least one of the two sections of the gate electrode arranged in the same trench is electrically connected to a gate electrode arranged in a further trench by way of a gate connecting electrode arranged in a further trench of the semiconductor body.