US 11,810,950 B2
Semiconductor structure
Huan Yun Zhang, Shanghai (CN); and Jian Wu, Shanghai (CN)
Assigned to Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai (CN); and Semiconductor Manufacturing International (Beijing) Corporation, Beijing (CN)
Filed by Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai (CN); and Semiconductor Manufacturing International (Beijing) Corporation, Beijing (CN)
Filed on Sep. 14, 2021, as Appl. No. 17/447,673.
Application 17/447,673 is a division of application No. 16/419,830, filed on May 22, 2019, granted, now 11,164,941.
Claims priority of application No. 201810567937.5 (CN), filed on Jun. 5, 2018.
Prior Publication US 2021/0408236 A1, Dec. 30, 2021
Int. Cl. H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 29/78 (2006.01); H01L 21/02 (2006.01); H01L 21/308 (2006.01); H01L 29/66 (2006.01); H01L 21/8234 (2006.01); H01L 29/10 (2006.01); H01L 29/08 (2006.01); H01L 27/088 (2006.01)
CPC H01L 29/0673 (2013.01) [H01L 21/0217 (2013.01); H01L 21/02236 (2013.01); H01L 21/02532 (2013.01); H01L 21/308 (2013.01); H01L 21/823412 (2013.01); H01L 21/823418 (2013.01); H01L 21/823431 (2013.01); H01L 27/0886 (2013.01); H01L 29/0847 (2013.01); H01L 29/1033 (2013.01); H01L 29/42392 (2013.01); H01L 29/6656 (2013.01); H01L 29/66545 (2013.01); H01L 29/7843 (2013.01); H01L 29/6659 (2013.01)] 10 Claims
OG exemplary drawing
 
1. A semiconductor structure, comprising:
a semiconductor substrate having a first region and a second region, the first region being used to form peripheral devices, the second region being used to form core devices, and a voltage of the peripheral devices being greater than a voltage of the core devices;
first nanowires formed over the first region of the semiconductor substrate;
second nanowires with a diameter smaller than a diameter of the first nanowires formed over the second region of the semiconductor substrate;
a first gate layer formed around the first nanowires; and
a second gate layer formed around the second nanowires.