US 11,810,947 B2
Semiconductor device
Hyukwoo Kwon, Seoul (KR); Ha-young Yi, Seongnam-si (KR); Byoungdeog Choi, Suwon-si (KR); and Seongmin Choo, Seoul (KR)
Assigned to Samsung Electronics Co., Ltd., Gyeonggi-do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Nov. 29, 2021, as Appl. No. 17/536,524.
Application 17/536,524 is a continuation of application No. 16/282,548, filed on Feb. 22, 2019, granted, now 11,211,447.
Claims priority of application No. 10-2018-0085553 (KR), filed on Jul. 23, 2018.
Prior Publication US 2022/0085150 A1, Mar. 17, 2022
Int. Cl. H01L 45/00 (2006.01); H01L 49/02 (2006.01); H01L 21/311 (2006.01); H10B 12/00 (2023.01)
CPC H01L 28/90 (2013.01) [H01L 21/31116 (2013.01); H01L 21/31144 (2013.01); H01L 28/92 (2013.01); H10B 12/033 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a substrate;
a capacitor bottom electrode disposed over the substrate;
a first support layer disposed over the substrate and contacting a side surface of the capacitor bottom electrode;
a second support layer disposed over the first support layer and contacting the side surface of the capacitor bottom electrode;
a dielectric layer disposed on the capacitor bottom electrode, the first support layer and the second support layer; and
a capacitor top electrode disposed on the dielectric layer,
wherein the capacitor bottom electrode includes:
a first portion that is disposed between the first support layer and the second support layer, and disposed adjacent to the first support layer; and
a second portion that is disposed between the first support layer and the second support layer, and disposed adjacent to the second support layer,
wherein a side surface of the first portion of the capacitor bottom electrode is substantially flat, and
the second portion of the capacitor bottom electrode includes a plurality of protrusions that protrude from a side surface of the second portion of the capacitor bottom electrode.