US 11,810,946 B2
Integrated circuit device including capacitor with metal nitrate interfacial layer
Jeonggyu Song, Seongnam-si (KR); Kyooho Jung, Seoul (KR); Younsoo Kim, Yongin-si (KR); Haeryong Kim, Seongnam-si (KR); and Jooho Lee, Hwaseong-si (KR)
Assigned to Samsung Electronics Co., Ltd., Gyeonggi-do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on May 20, 2022, as Appl. No. 17/749,702.
Application 17/749,702 is a continuation of application No. 16/839,641, filed on Apr. 3, 2020, granted, now 11,424,317.
Claims priority of application No. 10-2019-0130813 (KR), filed on Oct. 21, 2019.
Prior Publication US 2022/0293719 A1, Sep. 15, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. H10B 12/00 (2023.01); H01L 21/285 (2006.01); H01L 49/02 (2006.01)
CPC H01L 28/60 (2013.01) [H01L 21/28556 (2013.01); H10B 12/30 (2023.02)] 20 Claims
OG exemplary drawing
 
1. An integrated circuit device, comprising:
a substrate; and
a capacitor on the substrate,
wherein the capacitor comprises
a lower electrode including a metal nitride,
a dielectric layer on the lower electrode, the dielectric layer including a metal oxide including at least one of Hf, Zr, Al, Nb, Ce, La, Ta, and Ti,
an interfacial layer between the lower electrode and the dielectric layer, the interfacial layer including M, M′, N and O, wherein M is Ti and M′ is Nb, and
an upper electrode on the dielectric layer, the upper electrode including Ti and N.