CPC H01L 28/60 (2013.01) [H01L 21/28556 (2013.01); H10B 12/30 (2023.02)] | 20 Claims |
1. An integrated circuit device, comprising:
a substrate; and
a capacitor on the substrate,
wherein the capacitor comprises
a lower electrode including a metal nitride,
a dielectric layer on the lower electrode, the dielectric layer including a metal oxide including at least one of Hf, Zr, Al, Nb, Ce, La, Ta, and Ti,
an interfacial layer between the lower electrode and the dielectric layer, the interfacial layer including M, M′, N and O, wherein M is Ti and M′ is Nb, and
an upper electrode on the dielectric layer, the upper electrode including Ti and N.
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