US 11,810,913 B2
Semiconductor device
Yosuke Sakurai, Azumino (JP); Seiji Noguchi, Matsumoto (JP); and Toru Ajiki, Matsumoto (JP)
Assigned to FUJI ELECTRIC CO., LTD., Kanagawa (JP)
Filed by FUJI ELECTRIC CO., LTD., Kanagawa (JP)
Filed on Oct. 21, 2022, as Appl. No. 17/970,601.
Application 17/970,601 is a division of application No. 17/159,116, filed on Jan. 26, 2021, granted, now 11,488,951.
Application 17/159,116 is a continuation of application No. PCT/JP2019/047283, filed on Dec. 3, 2019.
Claims priority of application No. 2019-034869 (JP), filed on Feb. 27, 2019.
Prior Publication US 2023/0038105 A1, Feb. 9, 2023
Int. Cl. H01L 27/06 (2006.01); H01L 29/423 (2006.01); H01L 29/739 (2006.01); H01L 27/07 (2006.01); H01L 29/36 (2006.01)
CPC H01L 27/0664 (2013.01) [H01L 27/0727 (2013.01); H01L 29/36 (2013.01); H01L 29/4236 (2013.01); H01L 29/7395 (2013.01); H01L 29/7397 (2013.01)] 12 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a semiconductor substrate that includes a first conductivity type drift region;
a transistor portion that includes a first conductivity type emitter region having a doping concentration higher than the drift region in a region which is in contact with an upper surface of the semiconductor substrate; and
a diode portion that includes a first conductivity type cathode region having a doping concentration higher than the drift region in a region which is in contact with a lower surface of the semiconductor substrate, and is arranged side by side with the transistor portion in a preset arrangement direction in an upper surface of the semiconductor substrate; and
a second conductivity type lower surface region that is provided in a region other than the cathode region in a region which is in contact with the lower surface of the semiconductor substrate,
wherein the lower surface region includes a thick portion in which an end portion in a top view has a larger thickness in a depth direction of the semiconductor substrate than other portions.