US 11,810,910 B2
Group III nitride transistor structure capable of reducing leakage current and fabricating method thereof
Xing Wei, Suzhou (CN); Xiaodong Zhang, Suzhou (CN); Desheng Zhao, Suzhou (CN); and Baoshun Zhang, Suzhou (CN)
Assigned to SUZHOU INSTITUTE OF NANO-TECH AND NANO-BIONICS (SINANO) , CHINESE ACADEMY OF SCIENCES, Suzhou (CN)
Appl. No. 18/012,240
Filed by SUZHOU INSTITUTE OF NANO-TECH AND NANO-BIONICS (SINANO), CHINESE ACADEMY OF SCIENCES, Suzhou (CN)
PCT Filed Mar. 3, 2022, PCT No. PCT/CN2022/078927
§ 371(c)(1), (2) Date Dec. 22, 2022,
PCT Pub. No. WO2023/115701, PCT Pub. Date Jun. 29, 2023.
Claims priority of application No. 202111577242.3 (CN), filed on Dec. 22, 2021.
Prior Publication US 2023/0260988 A1, Aug. 17, 2023
Int. Cl. H01L 27/06 (2006.01); H01L 29/778 (2006.01); H01L 29/66 (2006.01); H01L 29/20 (2006.01); H01L 21/8252 (2006.01); H01L 29/872 (2006.01)
CPC H01L 27/0605 (2013.01) [H01L 21/8252 (2013.01); H01L 29/2003 (2013.01); H01L 29/66212 (2013.01); H01L 29/66219 (2013.01); H01L 29/66462 (2013.01); H01L 29/7786 (2013.01); H01L 29/7787 (2013.01); H01L 29/872 (2013.01)] 17 Claims
OG exemplary drawing
 
1. A group III nitride transistor structure capable of reducing a leakage current, comprising:
a first heterojunction and a second heterojunction which are laminated, wherein the first heterojunction is electrically isolated from the second heterojunction via a high resistance material or insertion layer;
a first electrode, a second electrode and a first gate which are matched with the first heterojunction, wherein the first electrode is electrically connected with the second electrode via a first two-dimensional electron gas in the first heterojunction, and a third semiconductor is arranged between the first gate and the first heterojunction, wherein the third semiconductor can exhaust a part of the first two-dimensional electron gas located below the third semiconductor, and the first gate is also electrically connected with the first electrode;
a source, a drain and a second gate which are matched with the second heterojunction, wherein the source is electrically connected with the drain via a second two-dimensional electron gas in the second heterojunction, and the source and the drain are also electrically connected with the first gate and the second electrode respectively, a sixth semiconductor is arranged between the second gate and the second heterojunction, wherein the sixth semiconductor can exhaust a part of the second two-dimensional electron gas located below the sixth semiconductor.