US 11,810,901 B2
Microelectronic devices, related memory devices and electronic systems, and methods of forming microelectronic devices
Fatma Arzum Simsek-Ege, Boise, ID (US); and Yuan He, Boise, ID (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Jun. 10, 2021, as Appl. No. 17/344,444.
Prior Publication US 2022/0399308 A1, Dec. 15, 2022
Int. Cl. H01L 25/065 (2023.01); H01L 25/18 (2023.01); H01L 25/00 (2006.01); H01L 27/12 (2006.01); H01L 23/00 (2006.01); H10B 12/00 (2023.01)
CPC H01L 25/0657 (2013.01) [H01L 25/18 (2013.01); H01L 25/50 (2013.01); H01L 24/32 (2013.01); H01L 27/1207 (2013.01); H01L 2224/32145 (2013.01); H01L 2924/1431 (2013.01); H01L 2924/1436 (2013.01); H10B 12/50 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A microelectronic device, comprising:
a first control logic region comprising first control logic devices;
a memory array region vertically overlying the first control logic region, the memory array region comprising:
capacitors;
access devices laterally neighboring and in electrical communication with the capacitors;
conductive lines operatively associated with the access devices and extending in a lateral direction; and
first conductive pillars operatively associated with the access devices and vertically extending through the memory array region; and
a second control region comprising second control logic devices vertically overlying the memory array region.