CPC H01L 23/5329 (2013.01) [H01L 21/02129 (2013.01); H01L 21/265 (2013.01); H01L 21/2636 (2013.01)] | 10 Claims |
1. A semiconductor device comprising:
a first insulating layer;
a semiconductor layer over and in contact with the first insulating layer;
a second insulating layer over the semiconductor layer; and
a first conductive layer over the first insulating layer,
wherein the second insulating layer is in contact with a top surface of the semiconductor layer and a side surface of the semiconductor layer,
wherein the second insulating layer includes a portion in contact with the first insulating layer in a region not overlapping with the semiconductor layer,
wherein the first conductive layer includes a portion overlapping with the semiconductor layer,
wherein the semiconductor layer includes a metal oxide,
wherein the first insulating layer includes an oxide,
wherein the second insulating layer includes an oxide,
wherein the semiconductor layer includes a first region overlapping with the first conductive layer and a second region not overlapping with the first conductive layer,
wherein the second insulating layer includes a third region overlapping with the first conductive layer and a fourth region not overlapping with the first conductive layer,
wherein the first insulating layer includes a fifth region not overlapping with the semiconductor layer and a sixth region overlapping with the semiconductor layer,
wherein the second region, the fourth region, the fifth region, and the sixth region contain a first element,
wherein the first element is phosphorus, boron, magnesium, aluminum, or silicon, and
wherein the fifth region includes a region with a higher concentration of the first element than the sixth region.
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