US 11,810,840 B2
Semiconductor device
Toshiyuki Okabe, Nagano (JP)
Assigned to SHINKO ELECTRIC INDUSTRIES CO., LTD., Nagano (JP)
Filed by SHINKO ELECTRIC INDUSTRIES CO., LTD., Nagano (JP)
Filed on Aug. 10, 2021, as Appl. No. 17/444,779.
Claims priority of application No. 2020-140090 (JP), filed on Aug. 21, 2020.
Prior Publication US 2022/0059438 A1, Feb. 24, 2022
Int. Cl. H01L 23/495 (2006.01); H01L 23/00 (2006.01); H01L 25/065 (2023.01); H01L 23/538 (2006.01); H01L 23/498 (2006.01)
CPC H01L 23/49531 (2013.01) [H01L 23/49575 (2013.01); H01L 23/49816 (2013.01); H01L 23/5386 (2013.01); H01L 24/32 (2013.01); H01L 24/48 (2013.01); H01L 25/0657 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48145 (2013.01); H01L 2924/186 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a lead frame having a first principal surface which includes a recess, and a second principal surface opposite to the first principal surface;
a relay board, disposed in the recess, and having a third principal surface, and a fourth principal surface opposite to the third principal surface and bonded to a surface of the lead frame forming a bottom of the recess;
a first semiconductor chip disposed on the third principal surface;
a first conductive material electrically connecting the lead frame and the relay board; and
a second conductive material electrically connecting the relay board and the first semiconductor chip,
wherein a distance between the second principal surface and the third principal surface is less than or equal to a distance between the second principal surface and the first principal surface.