US 11,810,815 B2
Dielectric capping structure overlying a conductive structure to increase stability
Hsin-Yen Huang, New Taipei (TW); Chi-Lin Teng, Taichung (TW); Hai-Ching Chen, Hsinchu (TW); Shau-Lin Shue, Hsinchu (TW); Shao-Kuan Lee, Kaohsiung (TW); Cheng-Chin Lee, Taipei (TW); and Ting-Ya Lo, Hsin-Chu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu (TW)
Filed on Apr. 26, 2022, as Appl. No. 17/729,429.
Application 17/729,429 is a division of application No. 16/876,432, filed on May 18, 2020, granted, now 11,322,395.
Claims priority of provisional application 62/949,545, filed on Dec. 18, 2019.
Prior Publication US 2022/0254678 A1, Aug. 11, 2022
Int. Cl. H01L 21/768 (2006.01); H01L 23/532 (2006.01); H01L 23/528 (2006.01); H01L 21/764 (2006.01)
CPC H01L 21/7682 (2013.01) [H01L 23/5329 (2013.01); H01L 21/764 (2013.01); H01L 23/528 (2013.01); H01L 23/5283 (2013.01); H01L 23/53295 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor structure comprising:
a conductive wire disposed within a first dielectric structure;
an etch stop layer overlying the first dielectric structure;
a dielectric capping layer disposed between an upper surface of the conductive wire and the etch stop layer; and
an upper dielectric layer disposed along sidewalls of the conductive wire and an upper surface of the etch stop layer, wherein the upper dielectric layer comprises a lateral segment, a first vertical segment, and a second vertical segment, wherein the lateral segment continuously extends from the first vertical segment to the second vertical segment, wherein the lateral segment contacts an upper surface of the dielectric capping layer, and wherein the first vertical segment contacts a first sidewall of the dielectric capping layer and the second vertical segment contacts a second sidewall of the dielectric capping layer.