US 11,810,792 B2
Etching method and substrate processing apparatus
Takanori Eto, Miyagi (JP); Masatsugu Makabe, Miyagi (JP); and Sho Saitoh, Miyagi (JP)
Assigned to Tokyo Electron Limited, Tokyo (JP)
Filed by Tokyo Electron Limited, Tokyo (JP)
Filed on Sep. 10, 2021, as Appl. No. 17/447,306.
Claims priority of application No. 2020-154147 (JP), filed on Sep. 14, 2020; and application No. 2021-116486 (JP), filed on Jul. 14, 2021.
Prior Publication US 2022/0084836 A1, Mar. 17, 2022
Int. Cl. H01L 21/311 (2006.01); H01J 37/32 (2006.01); H01L 21/768 (2006.01)
CPC H01L 21/31116 (2013.01) [H01J 37/32449 (2013.01); H01J 2237/334 (2013.01); H01L 21/76802 (2013.01)] 15 Claims
OG exemplary drawing
 
1. An etching method comprising:
mounting a substrate on a stage in a processing chamber, the substrate including a laminate film that includes at least (i) a silicon-containing insulating layer, (ii) an underlying layer disposed in the silicon-containing insulating layer, and (iii) a mask layer disposed in an upper layer of the silicon-containing insulating layer;
supplying process gas to the processing chamber, the process gas including at least one of fluorocarbon gas or hydrofluorocarbon gas;
selecting, based on a combination of material of the silicon-containing insulating layer and material of the underlying layer, a surface temperature range of at least one member of a first member or a second member in the processing chamber, the first member facing the substrate, and the second member being provided to encircle the substrate;
adjusting a surface temperature of the one member to be within the selected surface temperature range; and
forming a plasma in the processing chamber to which the process gas is supplied, thereby etching the silicon-containing insulating layer.